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Electronic device architectures for the nano-CMOS era [electronic resource] : from ultimate CMOS scaling to beyond CMOS devices / editor, Simon Deleonibus.

Contributor(s): Material type: TextPublication details: Singapore : Pan Stanford : Distributed by World Scientific, c2009.Description: xiv, 425 p. : ill. (some col.)ISBN:
  • 9789814241298 (ebook : PDF)
Subject(s): Genre/Form: Additional physical formats: No titleOnline resources: Available additional physical forms:
  • Also available in print edition.
Contents:
ch. 1. Physical and technological limitations of NANOCMOS devices to the end of the roadmap and beyond / Simon Deleonibus ... [et al.] -- ch. 2. Advanced CMOS devices on bulk and SOI : physics, modeling and characterization / Thierry Poiroux and Gilles Le Carval -- ch. 3. Devices structures and carrier transport properties of advanced CMOS using high mobility channels / Shinichi Takagi ... [et al.] -- ch. 4. High-K gate dielectrics / Hei Wong ... [et al.] -- ch. 5. Fabrication of source and drain : ultra shallow junction / Bunji Mizuno -- ch. 6. New interconnect schemes : end of copper, optical interconnects? / Suzanne Laval ... [et al.] -- ch. 7. Technologies and key design issues for memory devices / Kinam Kim and Gitae Jeong -- ch. 8. FeRAM and MRAM technologies / Yoshihiro Arimoto -- ch. 9. Advanced charge storage memories : from silicon nanocrystals to molecular devices / Barbara De Salvo and Gabriel Molas -- ch. 10. Single electron devices and applications / Jacques Gautier, Xavier Jehl, and Marc Sanquer -- ch. 11. Electronic properties of organic monolayers and molecular devices / Dominique Vuillaume -- ch. 12. Carbon nanotube electronics / Vincent Derycke, Arianna Filoramo and Jean-Philippe Bourgoin -- ch. 13. Spin electronics / Kyung-Jin Lee and Sang Ho Lim -- ch. 14. The longer term : quantum information processing and communication / Philippe Jorrand.
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Includes bibliographical references and index.

ch. 1. Physical and technological limitations of NANOCMOS devices to the end of the roadmap and beyond / Simon Deleonibus ... [et al.] -- ch. 2. Advanced CMOS devices on bulk and SOI : physics, modeling and characterization / Thierry Poiroux and Gilles Le Carval -- ch. 3. Devices structures and carrier transport properties of advanced CMOS using high mobility channels / Shinichi Takagi ... [et al.] -- ch. 4. High-K gate dielectrics / Hei Wong ... [et al.] -- ch. 5. Fabrication of source and drain : ultra shallow junction / Bunji Mizuno -- ch. 6. New interconnect schemes : end of copper, optical interconnects? / Suzanne Laval ... [et al.] -- ch. 7. Technologies and key design issues for memory devices / Kinam Kim and Gitae Jeong -- ch. 8. FeRAM and MRAM technologies / Yoshihiro Arimoto -- ch. 9. Advanced charge storage memories : from silicon nanocrystals to molecular devices / Barbara De Salvo and Gabriel Molas -- ch. 10. Single electron devices and applications / Jacques Gautier, Xavier Jehl, and Marc Sanquer -- ch. 11. Electronic properties of organic monolayers and molecular devices / Dominique Vuillaume -- ch. 12. Carbon nanotube electronics / Vincent Derycke, Arianna Filoramo and Jean-Philippe Bourgoin -- ch. 13. Spin electronics / Kyung-Jin Lee and Sang Ho Lim -- ch. 14. The longer term : quantum information processing and communication / Philippe Jorrand.

Also available in print edition.

Mode of access: World Wide Web.

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